| PART |
Description |
Maker |
| HN3G01J HN3G01 E002017 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
From old datasheet system
|
http://
Toshiba Semiconductor
|
| 2SK606 |
Silicon N Channel Junction Type
|
Panasonic
|
| 2SK24607 |
Silicon N Channel Junction Type For Constant Current, Impedance
|
Toshiba Semiconductor
|
| 2SJ14510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| 2SK71107 2SK711 |
Silicon N Channel Junction Type High Frequency Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SK37107 2SK371 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
FIELD-EFFECT TRANSISTOR
|
List of Unclassifed Manufacturers
ETC
N.A.
Isahaya Electronics Corporation
Electronic Theatre Controls, Inc.
|
| 2SJ74 E001300 |
P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3321 |
N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
